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| QED422, QED423 Plastic Infrared Light Emitting Diode August 2005 QED422, QED423 Plastic Infrared Light Emitting Diode Features = 880 nm Chip material = AlGaAs Package type: Plastic TO-46 Matched Photosensor: QSD722/723/724 Medium Wide Emission Angle, 30 High Output Power Package material and color: clear, purple tinted, plastic Description The QED422/423 is an 880 nm AlGaAs LED encapsulated in a clear, purple tinted, plastic TO-46 package. Package Dimensions 0.190 (4.83) 0.178 (4.52) REFERENCE SURFACE 0.220 (5.59) 0.030 (0.76) NOM 0.800 (20.3) MIN 0.050 (1.27) CATHODE 0.100 (2.54) NOM O 0.215 (5.46) NOM 45 0.020 (0.51) SQ. (2X) R 0.022 (0.56) Schematic ANODE CATHODE NOTES: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of .010 (.25) on all non-nominal dimensions unless otherwise specified. (c)2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com QED422, QED423 Rev. 1.0.0 QED422, QED423 Plastic Infrared Light Emitting Diode Absolute Maximum Ratings (TA = 25C unless otherwise specified) Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(2,3,4) Soldering Temperature (Flow)(2,3) Continuous Forward Current Reverse Voltage Power Dissipation(1) Symbol TOPR TSTG TSOL-I TSOL-F IF VR PD Rating -40 to + 100 -40 to + 100 240 for 5 sec 260 for 10 sec 100 5 200 Unit C C C C mA V mW Notes: 1. Derate power dissipation linearly 2.67 mW/C above 25C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron 1/16" (1.6 mm) minimum from housing Electrical/Optical Characteristics (TA =25C) Parameter Peak Emission Wavelength Emission Angle Forward Voltage Reverse Current Radiant Intensity QEC422 Radiant Intensity QEC423 Rise Time Fall Time Test Conditions IF = 100 mA IF = 100 mA IF = 100 mA, tp = 20 ms VR = 5 V IF = 100 mA, tp = 20 ms IF = 100 mA, tp = 20 ms IF = 100 mA Symbol PE 21/2 VF IR IE IE tr tf Min -- -- -- -- 10 20 -- -- Typ 880 30 -- -- -- -- 800 800 Max -- -- 1.8 10 40 -- -- -- Units nm Deg. V A mW/sr mW/sr ns ns 2 QED422, QED423 Rev. 1.0.0 www.fairchildsemi.com QED422, QED423 Plastic Infrared Light Emitting Diode Fig. 1 Normalized Radiant Intensity vs. Forward Current Ie - NORMALIZED RADIANT INTENSITY 10 Normalized to: IF = 100 mA Pulsed tpw = 100 s Duty Cycle = 0.1 % TA = 25C 2.0 Fig. 2 Forward Voltage vs. Ambient Temperature IF = 50 mA VF - FORWARD VOLTAGE (V) IF = 100 mA 1.5 1 0.1 1.0 IF = 20 mA IF = 10 mA 0.01 0.5 Normalized to: IF Pulsed tpw = 100 s Duty Cycle = 0.1 % -20 0 20 40 60 80 100 0.001 1 10 100 1000 0.0 -40 IF - FORWARD CURRENT (mA) TA - AMBIENT TEMPERATURE (C) Fig. 3 Normalized Radiant Intensity vs. Wavelength 1.0 Fig. 4 Radiation Diagram 110 120 130 140 100 90 80 70 60 50 40 30 20 10 0 1.0 0.8 0.6 0.4 0.2 0.0 0.2 0.4 0.6 0.8 1.0 NORMALIZED RADIANT INTENSITY 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 180 775 800 825 850 875 900 925 950 150 160 170 (nm) 3 QED422, QED423 Rev. 1.0.0 www.fairchildsemi.com QED422, QED423 Plastic Infrared Light Emitting Diode TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FAST ActiveArrayTM FASTrTM BottomlessTM FPSTM Build it NowTM FRFETTM CoolFETTM GlobalOptoisolatorTM CROSSVOLTTM GTOTM DOMETM HiSeCTM EcoSPARKTM I2CTM E2CMOSTM i-LoTM EnSignaTM ImpliedDisconnectTM FACTTM IntelliMAXTM FACT Quiet SeriesTM Across the board. Around the world.TM The Power Franchise Programmable Active DroopTM DISCLAIMER ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET UniFETTM VCXTM WireTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16 4 QED422, QED423 Rev. 1.0.0 www.fairchildsemi.com |
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